Seiko Technology established the silicon carbide wafer grinding mass production technology

Seiko Tech has developed an advanced technology for high-speed, high-precision grinding of next-generation semiconductor backplane materials—specifically silicon carbide (SiC) wafers. The company has already begun supplying samples to research institutions and development departments of component manufacturers. This innovative process is based on a patented method from the Industrial Technology Research Institute. What sets it apart is its use of a low-pressure grinding technique that minimizes crystal deformation, resulting in improved surface accuracy. The surface roughness achieved is as low as 0.1 nm, which is well below the Ra value of 0.3 nm required for epitaxial film growth. This breakthrough not only enhances the quality of SiC wafers but also significantly reduces polishing time and boosts mass production efficiency, making it a promising candidate for the next-generation semiconductor substrates. Beyond SiC, the technology can also be applied to other rapidly growing materials such as sapphire, gallium nitride (GaN), and zinc oxide (ZnO) crystals, expanding its potential applications. Sample deliveries started in July 2007, and the company is now focusing on scaling up its production capabilities. It plans to first enhance its small-scale production system and eventually establish a full-scale manufacturing facility in Matsui City, Chiba Prefecture. Compared to traditional silicon (Si) substrates, silicon carbide offers superior properties, including higher voltage and temperature resistance, as well as lower power loss. These advantages make it ideal for use in power equipment, communication systems, and power conversion devices such as those used in power plants, electric trains, and automotive drive systems. However, due to its extreme hardness, SiC has historically been difficult to process, making large-scale production a significant challenge. Seiko Tech’s new grinding technology is helping to overcome these obstacles, paving the way for broader adoption of SiC in the semiconductor industry.

High Temperature Insulation Materials

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